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| Preliminary data BSO201SP OptiMOS-P Small-Signal-Transistor Feature * P-Channel * Enhancement mode * Super Logic Level (2.5 V rated) * 150C operating temperature * Avalanche rated * dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -20 8 -14.9 V m A 8 7 6 5 D D D D SIS00062 Type BSO201SP Package SO 8 Ordering Code Q67042-S4071 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value -14.9 -11.9 Unit A Pulsed drain current TA=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg -59.6 248 -6 12 2.5 -55... +150 55/150/56 mJ kV/s V W C Avalanche energy, single pulse ID =-14.9 A , VDD =-10V, RGS =25 Reverse diode dv/dt IS =-14.9A, VDS =-16V, di/dt=200A/s, Tjmax =150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-21 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint, t < 10s @ 6 cm 2 cooling area 1) BSO201SP Symbol min. RthJS RthJA - Values typ. max. 35 110 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-250A Zero gate voltage drain current VDS =-20V, VGS =0, Tj =25C VDS =-20V, VGS =0, Tj =150C A -0.1 -10 -10 9.8 7.2 -1 -100 -100 12.9 8 nA m Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-11.9A Drain-source on-state resistance VGS =-4.5, ID =-14.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air; t 10 sec. Page 2 2001-12-21 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-10V, VGS =-4.5V, ID =-1A, RG=6 cVDS c2*cIDc*RDS(on)max ID =-11.9A VGS =0, VDS =-15V, f=1MHz BSO201SP Symbol Conditions min. 32 - Values typ. 64 5962 2168 781 21.3 39.7 108.5 127 max. 32 60 163 190 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |ID | VR =-10V, |IF | = |lD |, diF /dt=100A/s Qgs Qgd Qg VDD =-15V, ID =-14.9A - -9.7 -39.6 -85.5 -1.6 -14.5 nC -59 -128 V VDD =-15V, ID =-14.9A, VGS =0 to -4.5V V(plateau) VDD =-15V, ID =-14.9A IS ISM TA=25C - -0.8 62 43 -3.7 -59.6 -1.2 77 54 A V ns nC Page 3 2001-12-21 Preliminary data 1 Power dissipation Ptot = f (TA ) BSO201SP BSO201SP 2 Drain current ID = f (TA ) parameter: |VGS | 4.5 V -16 BSO201SP 2.8 W A 2.4 2.2 -12 2 Ptot ID 20 40 60 80 100 120 1.8 1.6 1.4 1.2 1 0.8 -10 -8 -6 -4 0.6 0.4 0.2 0 0 -2 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 4 Safe operating area ID = f ( VDS ) D 3 Transient thermal impedance ZthJS = f (tp) parameter : D = t p/T K/W tp = 120.0s parameter : D = 0 , TA = 25 C V -10 2 BSO201SP DS ( R on ) = 10 2 BSO201SP A 10 1 -10 1 ID ZthJS 1 ms 10 0 10 ms 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -2 -10 0 -10 -1 -1 -10 -10 0 DC 1 -10 V -10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2001-12-21 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 90 BSO201SP 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.05 Vgs = -2.5V A 0.04 70 60 50 Vgs = -3V Vgs = -4V Vgs = -4.5V Vgs = -10V Vgs = -2.2V RDS(on) 0.035 0.03 0.025 0.02 Vgs = - 2.2V Vgs = - 2.5V Vgs = - 3V Vgs = - 4.5V Vgs = - 10V - ID 40 30 0.015 20 Vgs = -1.8V 0.01 0.005 0 0 10 0 0 1 2 3 4 5 6 7 8 V 10 10 20 30 40 50 60 70 - V DS A 90 - ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS | 2 x |ID| x RDS(on)max parameter: tp = 80 s 35 8 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: tp = 80 s 120 S A 100 90 25 - ID g fs 20 15 10 5 0 0 0.5 1 1.5 2.5 80 70 60 50 40 30 20 10 V 0 0 5 10 15 20 25 30 - V GS 40 A - ID Page 5 2001-12-21 Preliminary data 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -14.9 A, VGS = -4.5 V 12 BSO201SP 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -250 A 1.6 m - VGS(th) V RDS(on) 1.2 98% 10 98% 1 9 0.8 8 0.6 typ. typ. 7 0.4 6 2% 0.2 5 -60 -20 20 60 100 C 160 Tj 0 -60 -20 20 60 100 C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s -10 2 BSO201SP Ciss A -10 1 C pF Coss IF -10 0 Tj = 25 C typ Tj = 150 C typ Crss Tj = 25 C (98%) Tj = 150 C (98%) 10 3 0 5 10 V 20 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 2001-12-21 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -14.9 A VDD = -10 V, RGS = 25 250 BSO201SP 14 Typ. gate charge |VGS| = f (QGate ) parameter: ID = -14.9 A pulsed 12 mJ V - VGS E AS 8 150 6 100 4 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 50 2 0 25 50 75 100 C Tj 150 0 0 20 40 60 80 100 nC 140 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSO201SP V -23.5 V (BR)DSS -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 C 180 Tj Page 7 2001-12-21 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. BSO201SP Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-12-21 |
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